Lei Hu, Associate Professor, Master’s Supervisor, faculty member at the School of Electronic and Information Engineering, Chongqing University of Science and Technology. He received his master degree in Materials Physics and Chemistry from the University of Chinese Academy of Sciences in 2014 (supervisor: Prof. Wenden Cheng) and his Ph.D. in Theoretical Chemistry from the Institute of Theoretical Chemistry, Jilin University in 2018 (supervisor: Prof. Xuri Huang). His doctoral studies were jointly conducted at Jilin University and the Applied Physics Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences (co-supervisor: Prof. Dongshan Wei). In 2020, he was a visiting scholar at the University of Electronic Science and Technology of China.
1. Research Interests
(1) Simulation and fabrication of ultrathin two dimensional field effect transistors
(2) Simulation and fabrication of SiC and GaN power devices
(3) Theoretical development and fabrication of photocatalysts
2. Selected Achievements
He has presided over two municipal level scientific research projects in Chongqing and one project of Chongqing Three Gorges University, and has participated in three National Natural Science Foundation projects. As first author or corresponding author, he has published more than 30 SCI papers in journals including Nano Research, Materials Today Physics, Applied Surface Science, Physical Review B, The Journal of Physical Chemistry C, Physical Chemistry Chemical Physics, The Journal of Chemical Physics, and International Journal of Hydrogen Energy, with a total of 57 publications and an h index of 22. For a complete list, please see his personal academic homepage (https://scholar.google.com/citations?hl=zh-CN&user=BgYlZ7cAAAAJ). Representative works include:
(1) High Driving Current and Enhanced Gate Control in 1 nm Gate Length Type II ZnO/GaN vdWH Field Effect Transistor via a Constituent Layer Selective Doping Strategy
Nano Research, 2026 (Student first author, with myself as the corresponding author, and recommended for the cover).
To address the ultra short channel effect in field effect transistors, this work proposes a “constituent layer selective doping (LSD)” strategy in 2D type II van der Waals heterojunctions and validates it in a ZnO/GaN MOSFET. By doping only the source/drain regions of the ZnO layer, the current is confined to transport within the ZnO layer, suppressing parasitic carriers in the GaN layer, reducing channel capacitance, and enhancing gate control. At a 1 nm gate length, the device simultaneously achieves high driving current and excellent subthreshold swing, outperforming existing 2D MOSFETs.
(2) Atomic Layer Selective Source/Drain Doping Unlocks High Current and Strong Gate Control in 1 nm Asymmetric Monolayer Ga2O3 Transistors
Nano Research, 2026 (Student first author, with myself as the corresponding author, and recommended for the cover).
Aiming at the ultra short channel effect, this study proposes an atomic layer selective doping (LD) strategy for sub 3 nm 2D monolayer semiconductor MOSFETs. In the Ga₂O₃ device, only the bottom Ga–O layer is n type doped, decoupling carrier injection from gate control and confining current transport to a specific atomic layer. Quantum transport simulations show that this approach simultaneously delivers high driving current, low leakage, and excellent gate control at the 1 nm node, providing a new route for ultra scaled logic device design.
(3) The role of interfacial (intrinsic) electric field on the structural, electronic, linear and nonlinear optical properties of MoS2/MoSSe vdWHs
Materials Today Physics, 2025 (Student first author, with myself as the corresponding author).
Using first principles calculations, this work investigates the influence of interfacial electric fields on second harmonic generation (SHG) in 2D MoS₂/MoSSe van der Waals heterojunctions. By reversing the built in electric field within the MoSSe layer, interfacial charge transfer and the interfacial electric field can be enhanced, significantly boosting the out of plane SHG coefficient and SHG intensity, while linear optical properties remain largely unchanged. This offers a novel mechanism for nonlinear optical modulation in 2D heterojunctions.
(4) α In2O3 monolayer: A promising material as field effect phototransistor and out of plane piezoelectric device
Applied Surface Science, 2023 (student first author, with myself as the corresponding author).
3. Academic Services
He serves as a reviewer for more than 20 SCI journals, including New Journal of Physics, Journal of Semiconductors, 2D Materials, Nanotechnology, Chemical Physics Letters, Journal of Alloys and Compounds, Inorganic Chemistry, Fuel, and International Journal of Hydrogen Energy. He is also an expert reviewer for the Ministry of Education’s bachelor’s and master’s thesis spot checking program. He has been invited to join the National Think Tank of Materials and Device Scientists and the Expert Committee on Optoelectronic Functional Materials and Devices.
Prospective students: Undergraduates and master’s students interested in semiconductor physics and devices are warmly welcome to join our research group for further study and training.
Contact
Email: huleisanxu@163.com (Response at the earliest time)
WeChat: 15143052610 (Response at the earliest time)
Office: Building 1, Room 311, Shensi Building (慎思楼一栋311)
胡雷，副教授，硕士研究生导师，任教于重庆三峡科技大学电子与信息工程学院。2014年毕业于中国科学院大学材料物理与化学专业，获工学硕士学位(导师程文旦研究员); 2018年毕业于吉林大学理论化学研究所，获理学博士学位(导师黄旭日教授)。博士由吉林大学与中国科学院重庆绿色智能技术研究院应用物理研究中心联合培养(合作导师魏东山研究员)。2020年于电子科技大学访问学习。
1.研究方向
(1)二维超薄场效应管仿真及制备
(2)SiC和GaN功率器件仿真及制备
(3) 光催化剂理论研发与制备
2. 代表成果
住持重庆市级科研项目两项，重庆三峡科技大学项目一项，参与国家自然科学基金三项，以第一作者或通讯作者在Nano Research, Materials Today Physics, Applied Surface Science, Physical Review B, The Journal of Physical Chemistry C, Physical Chemistry Chemical Physics, The Journal of Chemical Physics, International Journal of Hydrogen Energy发表SCI论文30余篇，累计发表57篇，h-index为22。完整论文见个人学术主页(https://scholar.google.com/citations?hl=zh-CN&user=BgYlZ7cAAAAJ)，代表工作如下:
(1) High Driving Current and Enhanced Gate Control in 1-nm Gate Length Type-Ⅱ ZnO/GaN vdWH Field-Effect Transistor via a Constituent-Layer-Selective Doping Strategy (Nano Research, 2026, 中科院一区top, 学生一作，本人通讯, 封面推荐)
针对场效应管超短沟道效应，提出二维Ⅱ型范德华异质结“层选择掺杂（LSD）”策略，并在ZnO/GaN MOSFET中验证。该方法仅对ZnO层源漏区掺杂，使电流局限于ZnO层传输，抑制GaN层寄生载流子，降低沟道电容并增强栅控能力。在1 nm栅长下，器件兼具高驱动电流与优异亚阈值摆幅，性能优于现有二维MOSFET。
(2) Atomic-Layer-Selective Source/Drain Doping Unlocks High Current and Strong Gate Control in 1-nm Asymmetric Monolayer Ga2O3 Transistors (Nano Research, 2026, 中科院一区top, 学生一作，本人通讯, 封面推荐)
针对场效应管超短沟道效应，研究提出一种适用于亚3 nm二维单层半导体MOSFET的原子层选择掺杂（LD）策略。在Ga2O3器件中，仅对底部Ga–O层进行n型掺杂，实现载流子注入与栅控解耦，使电流局限于特定原子层传输。量子输运结果表明，该方法在1 nm节点下兼具高驱动电流、低漏电和优异栅控性能，为超微缩逻辑器件设计提供新思路。
(3) The role of interfacial (intrinsic) electric field on the structural, electronic, linear and nonlinear optical properties of MoS2/MoSSe vdWHs, Materials today Physics, 2025 (中科院物理类一区top，学生一作，本人通讯).
研究基于第一性原理计算，探讨二维MoS₂/MoSSe范德华异质结中界面电场对二次谐波(SHG)的影响。通过反转MoSSe层内建电场，可增强界面电荷转移与界面电场，从而显著提升面外SHG系数和SHG强度，而线性光学性质基本保持不变，为二维异质结非线性光学调控提供了新机制。
(4) α-In2O3 monolayer: A promising material as field-effect phototransistor and out-of-plane piezoelectric device, Applied Surface Science,2023 (SCI一区，学生一作，本人通讯).
3. 社会兼职
New Journal of Physics, Journal of semiconductors, 2D Materials, Nanotechnology, Chemical Physical Letters, Journal of Alloys and Compounds, Inorganic Chemistry, Fuel, 与International Journal of Hydrogen Energy等20余种SCI杂志审稿人，教育部本科与研究生学位论文抽检专家，受邀加入全国材料与器件科学家智库与光电功能材料与器件专家委员会。诚邀对半导体物理与器件感兴趣的本科生与硕士生加入本课题组学习深造。
联系邮箱：huleisanxu@163.com; 微信: 15143052610; 办公地址：慎思楼一栋311.
